Innovative Research Award
Mohammad Bagher Nasrollahnejad
Islamic Azad University, Iran
Mohammad Bagher Nasrollahnejad is a researcher affiliated with Islamic Azad University, Iran, whose reported scientific work focuses on two-dimensional materials, nanoribbon structures, and field-effect transistor technologies. His publication record includes investigations of phosphorene-based tunneling transistors, edge configurations, structural defects, and quantum transport properties. His research profile reflects an interest in computational materials science and nanoscale electronic-device engineering. His reported Scopus metrics include 13 documents, 38 citations, and an h-index of 4. [1]
Abstract
Mohammad Bagher Nasrollahnejad’s research examines electronic and transport characteristics of low-dimensional nanomaterials, particularly phosphorene and emerging two-dimensional material systems. His reported publications investigate how edge passivation, atomic vacancies, structural defects, and geometrical configurations influence the electrical performance of nanoribbon-based field-effect transistors. These studies employ first-principles calculations and computational approaches to understand material properties and device behaviour at the nanoscale. The research contributes to the broader understanding of semiconductor nanostructures and potential electronic-device applications. [2]
Keywords
- Two-dimensional materials
- Phosphorene nanoribbons
- Field-effect transistors
- Tunneling field-effect transistors
Introduction
Two-dimensional materials have attracted considerable research interest because of their distinctive electronic structures, reduced dimensionality, and potential applications in next-generation semiconductor devices. Nanoribbons derived from these materials provide opportunities to investigate how edge geometry, atomic arrangements, and structural modifications affect electronic properties. Phosphorene, in particular, has been studied for its anisotropic electronic characteristics and possible applications in nanoscale transistor architectures. [3]
Research Profile
The research profile of Mohammad Bagher Nasrollahnejad is associated with computational investigations of nanoscale electronic materials and semiconductor device structures. His reported subject interests include two-dimensional materials, nanoribbon field-effect transistors, and the influence of structural modifications on electronic transport. His publication topics indicate an emphasis on understanding the electronic characteristics of low-dimensional materials through theoretical and numerical modelling. [1]
Research Contributions
One significant theme in the researcher’s publications is the investigation of defects in phosphorene nanoribbon tunneling field-effect transistors. Studies addressing Stone–Wales defects and vacancy positions examine how changes in atomic structure may influence electrical characteristics. These investigations contribute to the understanding of defect-dependent behaviour in two-dimensional semiconductor devices. [4] [5]
Publications
The supplied publication record includes studies published in journals such as Physica Scripta, International Journal of Electronics and Telecommunications, and International Journal of Modern Physics B. The works address defect engineering, edge configurations, and electronic transport in nanoribbon-based transistors. The following selected publications represent the research themes documented in the supplied records. [2]
- Edge Chemical Passivation Engineering of Armchair MoSi2N4 Nanoribbon PMOS Field-Effect Transistors: A First-Principles DFT–NEGF Investigation.
- Edge Passivation Engineering of Zigzag b010 Gallenene Nanoribbons: A First-Principles Investigation of Electronic Structure and Quantum Transport Properties.
Research Impact
The supplied Scopus profile reports 13 documents, 38 citations, and an h-index of 4 for Mohammad Bagher Nasrollahnejad. These indicators provide a quantitative overview of the indexed research output and citation activity associated with the profile. Citation metrics should be interpreted in the context of publication dates, research disciplines, database coverage, and the development of individual research areas. [1]
Award Suitability
The supplied research record presents several areas relevant to consideration for an Innovative Research Award. These include investigations of structural defects in phosphorene nanoribbons, edge-dependent transistor characteristics, and passivation engineering in emerging two-dimensional material systems. The use of first-principles computational approaches and quantum transport investigations demonstrates engagement with advanced theoretical methods in nanoscale electronic materials research.
Conclusion
Mohammad Bagher Nasrollahnejad’s reported research focuses on two-dimensional nanomaterials and their applications in nanoscale electronic devices, particularly nanoribbon-based field-effect transistors. His publications examine how defects, edge configurations, and chemical passivation influence electronic structures and transport characteristics. With 13 reported documents, 38 citations, and an h-index of 4, his indexed research profile provides measurable evidence of scholarly activity. The selected work offers a basis for academic consideration in the context of the Innovative Research Award under the Petroleum Engineering Awards, subject to independent verification and committee evaluation.
External Links
References
- Elsevier. (n.d.). Scopus author details: Mohammad Bagher Nasrollahnejad, Author ID 53985034300. Scopus.
https://www.scopus.com/authid/detail.uri?authorId=53985034300
- Edge Passivation Engineering of Zigzag b010 Gallenene Nanoribbons: A First-Principles Investigation of Electronic Structure and Quantum Transport Properties.
https://doi.org/10.1088/1402-4896/aea9d7
- Edge Chemical Passivation Engineering of Armchair MoSi2N4 Nanoribbon PMOS Field-Effect Transistors.
https://doi.org/10.1002/pssb.70352
- The Effect of Stone Wales Defect on the Electrical Characteristics of Phosphorene Nanoribbon Tunneling Field Effect Transistors. https://doi.org/10.1088/1402-4896/ae22a0
- Effect of Vacancy Defect Position on the Zigzag Phosphorene Nanoribbon Tunneling FETs.
https://doi.org/10.24425/ijet.2025.155476
- Exploring Performance Characteristics via Edge Configuration in Black Phosphorene TFETs.
https://doi.org/10.1142/S021797922540048X